MECHANISMS OF CHARGE BUILDUP IN MOS INSULATORS

被引：33
作者：
JOHNSON, WC [1 ]
机构：
[1] PRINCETON UNIV, DEPT ELECT ENGN, PRINCETON, NJ 08540 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1975年 / 22卷 / 06期
关键词：
D O I：
10.1109/TNS.1975.4328095
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2144 / 2150
页数：7
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