GROWTH-RATE ANISOTROPY AND MORPHOLOGY OF AUTOEPITAXIAL SILICON FILMS FROM SICL4

被引：29
|
作者：
VANDENBR.CH [1 ]
机构：
[1] PHILIPS RES LABS, EINDHOVEN, NETHERLANDS
来源：
JOURNAL OF CRYSTAL GROWTH | 1974年 / 23卷 / 04期
关键词：
D O I：
10.1016/0022-0248(74)90067-0
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：259 / 266
页数：8
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