GROWTH-RATE ANISOTROPY AND MORPHOLOGY OF AUTOEPITAXIAL SILICON FILMS FROM SICL4

被引：29

作者：

VANDENBR.CH ^{[1
]}

机构：

[1] PHILIPS RES LABS, EINDHOVEN, NETHERLANDS

来源：

JOURNAL OF CRYSTAL GROWTH | 1974年 / 23卷 / 04期

关键词：

D O I：

10.1016/0022-0248(74)90067-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：259 / 266

页数：8

共 50 条

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