EXCITED-STATE RESONANT TUNNELING IN GAAS-ALXGA1-XAS DOUBLE BARRIER HETEROSTRUCTURES

被引：12
|
作者：
REED, MA
机构：
[1] Texas Instruments Inc, Dallas, TX,, USA, Texas Instruments Inc, Dallas, TX, USA
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1986年 / 2卷 / 01期
关键词：
D O I：
10.1016/0749-6036(86)90155-2
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
PHYSICS
引用
收藏
页码：65 / 67
页数：3
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