ON THE CHARGE-HANDLING CAPACITY OF EPITAXIAL AND ION-IMPLANTED GAAS BURIED CHANNEL CHARGE-COUPLED-DEVICES

被引：0

作者：

RIGAUD, D ^{[1
]}

SODINI, D ^{[1
]}

TORBATI, K ^{[1
]}

TOUBOUL, A ^{[1
]}

POIRIER, R ^{[1
]}

机构：

[1] THOMSON CSF,LCR,F-91401 ORSAY,FRANCE

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1986年 / 21卷 / 06期

关键词：

D O I：

10.1051/rphysap:01986002106034900

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：349 / 356

页数：8

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