PREPARATION AND ELECTRICAL-PROPERTIES OF INPXOY GATE INSULATORS ON INP

被引：28
作者：
CHANG, HL
MEINERS, LG
SA, CJ
机构：
来源：
APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 05期
关键词：
D O I：
10.1063/1.96557
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：375 / 377
页数：3
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