EXTREMELY LOW-VOLTAGE FABRY-PEROT REFLECTION MODULATORS

被引：50
作者：
YAN, RH
SIMES, RJ
COLDREN, LA
机构：
[1] Department of Electrical and Computer Engineering, University of California, Santa Barbara
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 02期
关键词：
D O I：
10.1109/68.47066
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report a normally-on electroabsorptive surface-normal Fabry-Perot reflection modulator with a reflection change of 47% for an operating voltage swing of only 2 V, i.e., 23%/V which is the highest efficiency ever reported. The structure has an active region of twenty-four 100 Å GaAs/100 Å Al0.2Ga0.8As multiple quantum wells, sandwiched between two quarter-wavelength grating mirrors, the bottom one of which is more reflective. The wavelength range over which more than half of the maximum reflection change is observed extends as wide as ~ 7 nm for 2 V. © 1990 IEEE
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页码：118 / 119
页数：2
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