EXCITATION-ENERGY DEPENDENCE OF OPTICALLY INDUCED ESR IN A-SI-H - COMMENT

The infrared light-induced electron-spin-resonance (LESR) data of Ristein et al. [Phys. Rev. B 40, 88 (1989)] are reinterpreted. A model of undoped hydrogenated amorphous silicon (a-Si:H) including more charged than neutral dangling-bond defects yields a natural explanation of the experimental results. These LESR data are the most direct experimental evidence to date for the existence of bulk charged dangling bonds in undoped a-Si:H at electronic equilibrium. © 1990 The American Physical Society.