THE INFLUENCE OF SURFACE RECONSTRUCTION ON THE INITIAL-STAGES OF SILICON MOLECULAR-BEAM EPITAXY

被引：6
|
作者：
GOSSMANN, HJ
FELDMAN, LC
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 04期
关键词：
D O I：
10.1116/1.583215
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1065 / 1066
页数：2
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