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- [5] A TEM INVESTIGATION OF THE INITIAL-STAGES OF INSB GROWTH ON GAAS(001) BY MOLECULAR-BEAM EPITAXYMATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1990, 7 (03): : 203 - 208ZHANG, XSTATONBEVAN, AEPASHLEY, DW
- [6] LATTICE STRAIN RELAXATION AT THE INITIAL-STAGES OF HETEROEPITAXY OF GAAS ON (100)SI BY MOLECULAR-BEAM EPITAXYJOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 107 - 112YAO, TNAKAO, HKAWANAMI, HTOBA, R
- [7] SURFACE PHYSICS IN SILICON MOLECULAR-BEAM EPITAXYJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (11) : 2844 - 2848HIMPSEL, FJMORAR, JFYARMOFF, JA
- [8] MOLECULAR-BEAM EPITAXY AND RECONSTRUCTED SURFACES - INITIAL-STAGES OF INTERFACE FORMATION IN GROUP IV-IV STRUCTURESAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 38 (03): : 171 - 179GOSSMANN, HJFELDMAN, LC
- [9] SILICON MOLECULAR-BEAM EPITAXYELECTRONICS AND POWER, 1984, 30 (11-1): : 853 - 856KUBIAK, RPARKER, E