DEEP LEVEL INDUCED BY THERMAL-OXIDATION IN CZ N-TYPE SILICON

被引：2

作者：

HASEGAWA, T ^{[1
]}

MATSUMOTO, S ^{[1
]}

机构：

[1] KEIO UNIV,DEPT ELECT ENGN,YOKOHAMA,KANAGAWA 223,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1988年 / 27卷 / 10期

关键词：

D O I：

10.1143/JJAP.27.1906

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1906 / 1909

页数：4

共 9 条

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HU, SM .

[3] DEEP LEVELS INDUCED IN ANNEALED CZ SILICON [J].

IKEDA, K ;

TAKAOKA, H .

[4]

INOUE N, 1981, SEMICONDUCTOR SILICO, P282

LANG, DV .

[6]

MATSUMOTO S, 1986, 14TH P INT C DEF SEM, P1003

[7]

NARAYAN J, 1981, DEFECTS SEMICONDUCTO

[8]

SCHMALZ K, 1987, GETTERING DEFECT ENG, P27

[9] SWIRL FORMATION OF DEFECTS IN CZOCHRALSKI-GROWN SILICON CRYSTAL [J].

YASUAMI, S ;

OGINO, M ;

TAKASU, S .