LUMINESCENCE CHARACTERISTICS OF THE 1.4 EV SILICON RELATED COMPLEX IN GALLIUM-ARSENIDE

被引:14
作者
POMRENKE, GS
PARK, YS
机构
[1] USAF,WAL,AVION LAB,WRIGHT PATTERSON AFB,OH 45433
[2] USAF,INST TECHNOL,ATC,WRIGHT PATTERSON AFB,OH 45433
来源
PHYSICA B & C | 1983年 / 116卷 / 1-3期
关键词
D O I
10.1016/0378-4363(83)90283-8
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:414 / 419
页数:6
相关论文
共 15 条
[1]   RADIATIVE TRANSITIONS INDUCED IN GALLIUM-ARSENIDE BY MODEST HEAT-TREATMENT [J].
BIREY, H ;
SITES, J .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :619-634
[2]   PHOTOLUMINESCENCE STUDIES OF VACANCIES AND VACANCY-IMPURITY COMPLEXES IN ANNEALED GAAS [J].
CHIANG, SY ;
PEARSON, GL .
JOURNAL OF LUMINESCENCE, 1975, 10 (05) :313-322
[3]   ARSENIC VACANCY FORMATION IN GAAS ANNEALED IN HYDROGEN GAS-FLOW [J].
ITOH, T ;
TAKEUCHI, M .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (02) :227-232
[4]   ELECTRICAL AND OPTICAL PROPERTIES OF N-TYPE SI-COMPENSATED GAAS PREPARED BY LIQUID-PHASE EPITAXY [J].
KRESSEL, H ;
NELSON, H .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) :3720-&
[5]   LUMINESCENCE IN SILICON-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY [J].
KRESSEL, H ;
DUNSE, JU ;
NELSON, H ;
HAWRYLO, FZ .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) :2006-&
[6]   PHOTO-LUMINESCENCE OF THERMALLY TREATED N-TYPE SI-DOPED GAAS [J].
LUM, WY ;
WIEDER, HH .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) :6187-6188
[7]   STOICHIOMETRIC DISTURBANCES IN ION-IMPLANTED GAAS AND REDISTRIBUTION OF CR DURING ANNEALING [J].
MAGEE, TJ ;
KAWAYOSHI, H ;
ORMOND, RD ;
CHRISTEL, LA ;
GIBBONS, JF ;
HOPKINS, CG ;
EVANS, CA ;
DAY, DS .
APPLIED PHYSICS LETTERS, 1981, 39 (11) :906-908
[8]  
PANKOVE JI, 1971, OPTICAL PROCESSES SE, P151
[9]  
Sansbury J. D., 1970, Radiation Effects, V6, P269, DOI 10.1080/00337577008236306
[10]   OPTICAL AND ELECTRICAL-PROPERTIES OF DISORDERED LAYERS IN GAAS CRYSTALS PRODUCED BY SI+-ION IMPLANTATION [J].
SHIGETOMI, S ;
MATSUMORI, T .
NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :719-726