PREPARATION OF AMORPHIC SILICON DIOXIDE SAMPLES FOR GAP STUDIES IN ELECTRON-MICROSCOPE

被引：0
作者：
AYUPOV, BM [1 ]
DANILOVI.VS [1 ]
机构：
[1] ACAD SCI USSR, INORG CHEM INST, NOVOSIBIRSK, USSR
来源：
ZAVODSKAYA LABORATORIYA | 1974年 / 40卷 / 06期
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D O I：
暂无
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
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页码：697 / 699
页数：3
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[7]   EVIDENCE FOR OXIDATION GROWTH AT THE OXIDE-SILICON INTERFACE FROM CONTROLLED ETCH STUDIES [J].
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