REAL-TIME SPECTROSCOPIC ELLIPSOMETRY STUDY OF HYDROGENATED AMORPHOUS-SILICON P-I-N SOLAR-CELLS - CHARACTERIZATION OF MICROSTRUCTURAL EVOLUTION AND OPTICAL GAPS

被引：23

作者：

KOH, J ^{[1
]}

LU, YW ^{[1
]}

KIM, S ^{[1
]}

BURNHAM, JS ^{[1
]}

WRONSKI, CR ^{[1
]}

COLLINS, RW ^{[1
]}

机构：

[1] PENN STATE UNIV,DEPT PHYS,UNIVERSITY PK,PA 16802

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 18期

关键词：

D O I：

10.1063/1.114287

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spectroscopic ellipsometry measurements have been performed during the preparation of hydrogenated amorphous silicon p-i-n solar cells in the SnO2:F/p-i-n/Cr configuration. Postdeposition data analysis yields the evolution of bulk, surface roughness, and interface layer thicknesses with similar to 0.2 Angstrom sensitivity. in addition, the dielectric functions and optical gaps of the p-, i-, and n-layers are determined in the analysis. With the real time measurement approach, the layer properties are determined in the actual device configuration, rather than being inferred indirectly from studies of thick film counterparts. (C) 1995 American Institute of Physics.

引用

页码：2669 / 2671

页数：3

共 15 条

[1] INSITU DETERMINATION OF DIELECTRIC FUNCTIONS AND OPTICAL GAP OF ULTRATHIN AMORPHOUS-SILICON BY REAL-TIME SPECTROSCOPIC ELLIPSOMETRY [J].