TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE AND RAMAN-SPECTRA FROM POROUS GESI/SI HETEROSTRUCTURES

被引：5

作者：

SHI, HT ^{[1
]}

ZHENG, YD ^{[1
]}

WANG, YB ^{[1
]}

YUAN, RK ^{[1
]}

机构：

[1] JIANGSU EDUC INST, DEPT PHYS, NANJING 210013, PEOPLES R CHINA

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1993年 / 57卷 / 06期

关键词：

D O I：

10.1007/BF00331761

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Porous GeSi/Si heterostructures were fabricated by laterally anodization in HF-based solutions. Photoluminescence spectra have been investigated as a function of temperature (77-300 K), showing that porous GeSi has a quite different temperature dependence from that of porous silicon. Raman spectra indicated that the sample structure changed after anodization. Phonon participation and direct recombination of excitons are proposed to be responsible in the light emission processes of porous GeSi and Si, respectively.

引用

页码：573 / 575

页数：3

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