Heating and damage of InGaAs/GaAs/AlGaAs laser facets

被引：0
|
作者：
Rechenberg, I [1 ]
Hopner, A [1 ]
Maege, J [1 ]
Klein, A [1 ]
Beister, G [1 ]
Weyers, M [1 ]
机构：
[1] MAX PLANCK INST FESTKORPERFORSCH,D-70569 STUTTGART,GERMANY
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 1995 | 1995年 / 146卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The temperature rise of coated laser facets during operation has been investigated by means of cathodoluminescence (CL). The peak shift of the signals from confinement and cladding layers indicates heating of the front facet by up to 300 K for ridge waveguide (RW) laser diodes driven at an output power of 150 mW. Contrast changes in transmission electron microscopy (TEM) images indicate that the high temperature in the laser spot on the facet can result in interdiffusion of aluminium and indium.
引用
收藏
页码：587 / 590
页数：4
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