INTERFACE PROPERTIES OF SI ON SAPPHIRE AND SPINEL

被引：32

作者：

SCHLOTTERER, H ^{[1
]}

机构：

[1] SIEMENS AG,RES LABS,MUNICH,FED REP GER

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1976年 / 13卷 / 01期

关键词：

D O I：

10.1116/1.568832

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：29 / 36

页数：8

共 44 条

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[4]

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[6]

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[8]

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[10] DEFORMATION OF AND STRESS IN EPITAXIAL SILICON FILMS ON SINGLE-CRYSTAL SAPPHIRE [J].

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JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2700-&

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