DOPING OF GAAS EPITAXIAL LAYERS GROWN ON (100)GAAS BY CLOSE-SPACED VAPOR TRANSPORT

被引：18

作者：

KOSKIAHDE, E ^{[1
]}

COSSEMENT, D ^{[1
]}

PAYNTER, R ^{[1
]}

DODELET, JP ^{[1
]}

机构：

[1] CONCORDIA UNIV, MONTREAL H3G 1M8, QUEBEC, CANADA

来源：

CANADIAN JOURNAL OF PHYSICS | 1989年 / 67卷 / 04期

关键词：

D O I：

10.1139/p89-044

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：251 / 258

页数：8

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