ENERGY-BAND STRUCTURE OF COSI2 EPITAXIALLY GROWN ON SI(111)

被引：36

作者：

GEWINNER, G

PIRRI, C

PERUCHETTI, JC

BOLMONT, D

DERRIEN, J

THIRY, P

机构：

[1] CNRS,CTR RECH MECAN CROISSANCE CRISTALLINE,F-13288 MARSEILLE 9,FRANCE

[2] UNIV PARIS 11,UTILISAT RAYONNEMENT ELECTROMAGNET LAB,F-91405 ORSAY,FRANCE

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.38.1879

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1879 / 1884

页数：6

共 37 条

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