ULTRASONICS IN INTEGRATED ELECTRONICS

被引：19
作者：
NEWELL, WE
机构：
来源：
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1965年 / 53卷 / 10期
关键词：
D O I：
10.1109/PROC.1965.4246
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1305 / +
页数：1
相关论文
共 28 条
[1]  
ALT FL, 1961, ADVANCES COMPUTERS, V2, P188
[2]   OPTOELECTRONICS AS APPLIED TO FUNCTIONAL ELECTRONIC BLOCKS [J].
BIARD, JR ;
MATZEN, WT ;
BONIN, EL ;
MERRYMAN, JD .
PROCEEDINGS OF THE IEEE, 1964, 52 (12) :1529-&
[3]   PROGRESS IN ELECTROMECHANICAL FILTERS [J].
BORNER, M .
RADIO AND ELECTRONIC ENGINEER, 1965, 29 (03) :173-&
[4]  
CURRAN DR, 1964, WESCON
[5]   VAPOR-DEPOSITED THIN-FILM PIEZOELECTRIC TRANSDUCERS [J].
DEKLERK, J ;
KELLY, EF .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1965, 36 (04) :506-&
[6]   ULTRA-HIGH FREQUENCY CADMIUM-SULPHIDE TRANSDUCERS [J].
FOSTER, NF .
IEEE TRANSACTIONS ON SONICS AND ULTRASONICS, 1964, SU11 (02) :63-+
[7]  
GIKOW E, 1960, IRE T MIL ELECTRON, VMIL4, P469
[8]   SURVEY OF MECHANICAL FILTERS AND THEIR APPLICATIONS [J].
HATHAWAY, JC ;
BABCOCK, DF .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (01) :5-16
[9]  
HERWALD SW, 1960, WESTINGHOUS ENGR, V20, P66
[10]   SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J].
HOFSTEIN, SR ;
HEIMAN, FP .
PROCEEDINGS OF THE IEEE, 1963, 51 (09) :1190-&
123