A 2.2-V 2.9-ppm/degrees C BiCMOS bandgap voltage reference with full temperature-range curvature-compensation

被引：0

作者：

Zhou Zekun ^{[1
]}

Ma Yingqian ^{[1
]}

Ming Xin ^{[1
]}

Zhang Bo ^{[1
]}

Li Zhaoji ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2010年 / 31卷 / 07期

关键词：

high-order curvature compensation; exponential curvature compensation; piecewise curvature compensation; BiCMOS bandgap reference; temperature coefficient; PSRR;

D O I：

10.1088/1674-4926/31/7/075004

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A high precision high-order curvature-compensated bandgap reference compatible with the standard Bi-CMOS process, which uses a simple structure to realize a novel exponential curvature compensation in lower temperature ranges, and a piecewise curvature correction in higher temperature ranges, is presented. Experiment results of the proposed bandgap reference implemented with a 0.6-mu m BCD process demonstrate that a temperature coefficient of 2.9 ppm/degrees C is realized at a 3.6-V power supply, a power supply rejection ratio of 85 dB is achieved, and the line regulation is better than 0.318 mV/V for 2.2-5 V supply voltage dissipating a maximum supply current of 45 mu A. The active area of the presented bandgap reference is 260 x 240 mu m(2).

引用

页数：5

共 13 条

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