ELECTROABSORPTION AVALANCHE PHOTODIODES

被引：31

作者：

STILLMAN, GE ^{[1
]}

WOLFE, CM ^{[1
]}

ROSSI, JA ^{[1
]}

DONNELLY, JP ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

APPLIED PHYSICS LETTERS | 1974年 / 25卷 / 11期

关键词：

D O I：

10.1063/1.1655355

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：671 / 673

页数：3

共 14 条

[1]

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[3] OPTICAL ABSORPTION IN ELECTRIC FIELD [J].

CALLAWAY, J .

PHYSICAL REVIEW, 1964, 134 (4A) :A998-+

[4]

FRANZ W, 1958, Z NATURFORSCHUNG A, V13, P494

[5] AVALANCHE BREAKDOWN OF GALLIUM ARSENIDE P-N JUNCTIONS [J].

HALL, R ;

LECK, JH .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1968, 25 (06) :529-&

[6]

Keldysh L. V., 1958, SOV PHYS JETP, V34, P788

[7] GAAS SCHOTTKY BARRIER AVALANCHE PHOTODIODES [J].

LINDLEY, WT ;

PHELAN, RJ ;

WOLFE, CM ;

FOYT, AG .

APPLIED PHYSICS LETTERS, 1969, 14 (06) :197-+

[8]

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[9] HIGH-POWER NARROW-LINEWIDTH OPERATION OF GAAS DIODE LASERS [J].

ROSSI, JA ;

CHINN, SR ;

HECKSCHER, H .

APPLIED PHYSICS LETTERS, 1973, 23 (01) :25-27

[10] OPTICAL-ABSORPTION AND PHOTOLUMINESCENCE STUDIES OF THIN GAAS LAYERS IN GAAS-AL CHI GA1-CHI AS DOUBLE HETEROSTRUCTURES [J].

SELL, DD ;

CASEY, HC .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) :800-807

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