NOVEL OXIDATION PROCESS IN GE+-IMPLANTED SI AND ITS EFFECT ON OXIDATION-KINETICS

被引：97

作者：

HOLLAND, OW

WHITE, CW

FATHY, D

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 07期

关键词：

D O I：

10.1063/1.98385

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：520 / 522

页数：3

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