NOVEL OXIDATION PROCESS IN GE+-IMPLANTED SI AND ITS EFFECT ON OXIDATION-KINETICS

被引：97
作者：
HOLLAND, OW
WHITE, CW
FATHY, D
机构：
来源：
APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 07期
关键词：
D O I：
10.1063/1.98385
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：520 / 522
页数：3
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