CVD OF COVALENT COMPOUNDS AND HIGH-T-C SUPERCONDUCTORS

被引：2
作者：
GOMEZALEIXANDRE, C [1 ]
SANCHEZ, O [1 ]
ALBELLA, JM [1 ]
SANTISO, J [1 ]
FIGUERAS, A [1 ]
机构：
[1] CSIC,INST CIENCIA MAT,E-08193 BARCELONA,SPAIN
来源：
ADVANCED MATERIALS | 1995年 / 7卷 / 02期
关键词：
D O I：
10.1002/adma.19950070203
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Chemical vapor deposition at high temperatures provided the deposited atoms with the necessary surface mobility to ensure crystallinity and epitaxial growth. The use of high-temperature CVD in the deposition of high-T-c superconducting ceramics and covalent materials such as diamond (see Figure) and boron nitride is reviewed, and, for example, the methods used to maintain the tetrahedral arrangement of neighboring atoms during deposition discussed.
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页码：111 / 119
页数：9
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