SPECTROSCOPY OF RADIATION-DAMAGE IN SILICON MIS STRUCTURES

被引:0
作者
PRIKHODKO, VG
ZHDAN, AG
GALKIN, GN
ABBASOVA, RU
BOBROVA, EA
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1982年 / 16卷 / 07期
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O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:808 / 809
页数:2
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共 5 条
[1]  
GALKIN GN, 1982, FIZ TEKH POLUPROVODN, V16, P1162
[2]   CONSTANT-CAPACITANCE DLTS MEASUREMENT OF DEFECT-DENSITY PROFILES IN SEMICONDUCTORS [J].
JOHNSON, NM ;
BARTELINK, DJ ;
GOLD, RB ;
GIBBONS, JF .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) :4828-4833
[3]   A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS [J].
KUHN, M .
SOLID-STATE ELECTRONICS, 1970, 13 (06) :873-+
[4]  
PRIKHODKO VG, 1981, SOV PHYS SEMICOND+, V15, P1394
[5]   DEFECT SPATIAL DISTRIBUTIONS IN ANNEALED ION-IMPLANTED SILICON MEASURED BY A TRANSIENT CAPACITANCE TECHNIQUE [J].
WANG, KL .
APPLIED PHYSICS LETTERS, 1976, 29 (11) :700-702