PREPARATION OF MGIN2O4-X THIN-FILMS ON GLASS SUBSTRATE BY RF-SPUTTERING

被引：62
|
作者：
UNNO, H
HIKUMA, N
OMATA, T
UEDA, N
HASHIMOTO, T
KAWAZOE, H
机构：
[1] TOKYO INST TECHNOL, ENGN MAT RES LAB, MIDORI KU, YOKOHAMA, KANAGAWA 227, JAPAN
[2] INST MOLEC SCI, OKAZAKI 444, JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 9A期
关键词：
MGLN2O4-X THIN FILM; NEW TRANSPARENT CONDUCTOR; RF SPUTTERING; WIDE BAND GAP (SIMILAR-TO-34 EV); HIGH CONDUCTIVITY;
D O I：
10.1143/JJAP.32.L1260
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
MgIn2O4-X thin films were deposited onto a silica glass plate by the RF sputtering method. The highest conductivity observed for the film post-annealed under H-2 flow was 2.3 x 10(2) S/CM, With a carrier concentration of 6.3 x 10(20) CM-3 and a mobility of 2.2 cm2.V-1.s-1. No distinct optical absorption band was observed in the visible region.
引用
收藏
页码：L1260 / L1262
页数：3
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