THZ SPECTROSCOPY AND SOURCE CHARACTERIZATION BY OPTOELECTRONIC INTERFEROMETRY

被引：45
作者：
RALPH, SE
GRISCHKOWSKY, D
机构：
[1] IBM Watson Research Center, Yorktown Heights, NY 10598
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 09期
关键词：
D O I：
10.1063/1.106447
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate a new type of THz optoelectronic interferometer, by fully characterizing a recently developed THz source to beyond 6 THz, and by measuring the absorption coefficient of high-resistivity GaAs from 1 to 5 THz. The two source THz interferometer is driven with two 4 mW beams of 60 fs dye-laser pulses and produces interferograms with exceptional signal-to-noise ratios.
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页码：1070 / 1072
页数：3
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