HOLE TRAPPING AND BREAKDOWN IN THIN SIO2

被引：103

作者：

CHEN, IC

HOLLAND, S

HU, CM

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 03期

关键词：

D O I：

10.1109/EDL.1986.26332

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：164 / 167

页数：4

共 19 条

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[9] GENERATION OF OXIDE CHARGE AND INTERFACE STATES BY IONIZING-RADIATION AND BY TUNNEL INJECTION EXPERIMENTS [J].

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[10] COMPARATIVE STUDIES OF TUNNEL INJECTION AND IRRADIATION ON METAL-OXIDE SEMICONDUCTOR STRUCTURES [J].

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