HOLE TRAPPING AND BREAKDOWN IN THIN SIO2

[1] CHEN IC, 1985, IEEE T ELECTRON DEV, V32, P413, DOI 10.1109/T-ED.1985.21957

[2] CHEN IC, 1985 P INT REL PHYS, P24

[3] IMPACT IONIZATION MODEL FOR DIELECTRIC INSTABILITY AND BREAKDOWN [J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 685 - 687

[4] FERRY DK, 1978, PHYSICS SIO2 ITS INT, P29

[5] SIMPLE-MODEL FOR PREDICTING RADIATION EFFECTS IN MOS DEVICES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (06) : 1216 - 1225

[6] HOLLAND S, UNPUB CORRELATION BR

[7] THEORY OF RESPONSE OF RADIATION SENSING FIELD-EFFECT TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1375 - 1379

[8] CURRENT RUNAWAY IN INSULATORS AFFECTED BY IMPACT IONIZATION AND RECOMBINATION [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (10) : 4364 - 4372

[9] GENERATION OF OXIDE CHARGE AND INTERFACE STATES BY IONIZING-RADIATION AND BY TUNNEL INJECTION EXPERIMENTS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) : 1471 - 1478

[10] COMPARATIVE STUDIES OF TUNNEL INJECTION AND IRRADIATION ON METAL-OXIDE SEMICONDUCTOR STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6946 - 6952

[1] CHEN IC, 1985, IEEE T ELECTRON DEV, V32, P413, DOI 10.1109/T-ED.1985.21957

[2] CHEN IC, 1985 P INT REL PHYS, P24

[3] IMPACT IONIZATION MODEL FOR DIELECTRIC INSTABILITY AND BREAKDOWN [J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 685 - 687

[4] FERRY DK, 1978, PHYSICS SIO2 ITS INT, P29

[5] SIMPLE-MODEL FOR PREDICTING RADIATION EFFECTS IN MOS DEVICES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (06) : 1216 - 1225

[6] HOLLAND S, UNPUB CORRELATION BR

[7] THEORY OF RESPONSE OF RADIATION SENSING FIELD-EFFECT TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1375 - 1379

[8] CURRENT RUNAWAY IN INSULATORS AFFECTED BY IMPACT IONIZATION AND RECOMBINATION [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (10) : 4364 - 4372

[9] GENERATION OF OXIDE CHARGE AND INTERFACE STATES BY IONIZING-RADIATION AND BY TUNNEL INJECTION EXPERIMENTS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) : 1471 - 1478

[10] COMPARATIVE STUDIES OF TUNNEL INJECTION AND IRRADIATION ON METAL-OXIDE SEMICONDUCTOR STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6946 - 6952