MECHANISM OF SURFACE CONDUCTION IN SEMI-INSULATING GAAS

被引：40

作者：

CHANG, MF

LEE, CP

HOU, LD

VAHRENKAMP, RP

KIRKPATRICK, CG

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 09期

关键词：

D O I：

10.1063/1.94961

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：869 / 871

页数：3

共 11 条

[1]

CHANG MF, UNPUB SEMIINSULATING

[2]

CHEN RC, COMMUNICATION

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GRANT, RW ;

WALDROP, JR ;

KOWALCZYK, SP ;

KRAUT, EA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :477-480

[4]

HASEGAWA F, 1983, 15TH C SOL STAT DEV

[5] COMPENSATION MECHANISM IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS - IMPORTANCE OF MELT STOICHIOMETRY [J].

HOLMES, DE ;

CHEN, RT ;

ELLIOTT, KR ;

YU, PW .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (07) :949-955

[6]

HUGHES B, 1982, INT S GAAS RELATED C

[7] INJECTION CURRENTS IN INSULATORS [J].

LAMPERT, MA .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (08) :1781-&

[8]

LEE CP, 1982, IEEE ELECTRON DEVICE, V3, P97

[9]

LEE CP, 1982, 1982 IEEE GAAS IC S, P169

[10] OUT-DIFFUSION OF THE MAIN ELECTRON TRAP IN BULK GAAS DUE TO THERMAL-TREATMENT [J].

MAKRAMEBEID, S ;

GAUTARD, D ;

DEVILLARD, P ;

MARTIN, GM .

APPLIED PHYSICS LETTERS, 1982, 40 (02) :161-163

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