Pb(Zr0:52Ti0:48)O-3 memory capacitor on Si with a polycrystalline silicon/ SiO2 stacked buffer layer

被引：0

作者：

Cai Daolin ^{[1
]}

Li Ping ^{[2
]}

Zhai Yahong ^{[2
]}

Song Zhitang ^{[1
]}

Chen Houpeng ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Micro Syst & Informat Technol, State Key Lab Funct Mat Informat, Lab Nanotechnol, Shanghai 200050, Peoples R China

[2] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2011年 / 32卷 / 09期

关键词：

capacitor; thin film; memory;

D O I：

10.1088/1674-4926/32/9/094007

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Pb(Zr0:52Ti0:48)O3 ( PZT) thin films have been deposited on a p-type Si substrate separated by a polycrystalline silicon/SiO2 stacked buffer layer. The X-ray diffraction peaks of the PZT thin films prepared on the polycrystalline silicon annealed at different temperatures were measured. In addition, the polarization of the Pt/PZT/polycrystalline silicon capacitor has been investigated. The memory capacitor of the metal/ ferroelectric/ polycrystalline silicon/SiO2/semiconductor structure annealed at 650 degrees C exhibits a clockwise capacitance-voltage hysteresis loop due to the ferroelectric polarization of the PZT thin film. The memory window increases with increasing the area coupling ratio between the SiO2 capacitor and the PZT capacitor.

引用

页数：4