ZNSE HOMO-EPITAXIAL GROWTH BY MOLECULAR-BEAM EPITAXY

被引:26
作者
MENDA, K
TAKAYASU, I
MINATO, T
KAWASHIMA, M
机构
关键词
D O I
10.1016/0022-0248(90)90740-C
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
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页码:342 / 347
页数:6
相关论文
共 10 条
[1]  
CHO AY, 1975, PROGR SOLID STATE CH, V10
[2]   EXPERIMENTAL PROOF OF THE EXISTENCE OF A NEW ELECTRONIC COMPLEX IN SILICON [J].
HAYNES, JR .
PHYSICAL REVIEW LETTERS, 1960, 4 (07) :361-363
[3]   EXCITONS AND ABSORPTION EDGE IN ZNSE [J].
HITE, GE ;
MARPLE, DTF ;
AVEN, M ;
SEGALL, B .
PHYSICAL REVIEW, 1967, 156 (03) :850-&
[4]  
ISSHIKI M, IN PRESS PHYS REV
[5]   ANOMALOUS OXIDATION PROPERTIES OF ZNSE (100) SURFACE [J].
LUDEKE, R .
SOLID STATE COMMUNICATIONS, 1977, 24 (10) :725-728
[6]   OBSERVATION OF STRAIN EFFECTS AND EVIDENCE OF GALLIUM AUTODOPING IN MOLECULAR-BEAM-EPITAXIAL ZNSE ON (100)GAAS [J].
MAR, HA ;
PARK, RM .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) :1229-1232
[7]   HOMOEPITAXIAL AND HETEROEPITAXIAL GROWTH OF HIGH-QUALITY ZNSE BY MOLECULAR-BEAM EPITAXY [J].
PARK, RM ;
MAR, HA ;
SALANSKY, NM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (06) :1637-1640
[8]  
TAKAYASU I, 1987, UNPUB
[9]   THE EFFECT OF LATTICE DEFORMATION ON OPTICAL-PROPERTIES AND LATTICE-PARAMETERS OF ZNSE GROWN ON (100)GAAS [J].
YAO, T ;
OKADA, Y ;
MATSUI, S ;
ISHIDA, K ;
FUJIMOTO, I .
JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :518-523
[10]  
YAO T, 1985, TECHNOLOGY PHYSICS M