SHORT-CAVITY GAALAS LASER BY WET CHEMICAL ETCHING

被引:27
作者
BOUADMA, N
RIOU, J
BOULEY, JC
机构
关键词
D O I
10.1049/el:19820596
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:879 / 880
页数:2
相关论文
共 8 条
[1]   MONOLITHIC GAAS INJECTION MESA LASERS WITH GROWN OPTICAL FACETS [J].
BLUM, FA ;
LAWLEY, KL ;
DOERBECK, FH ;
HOLTON, WC .
APPLIED PHYSICS LETTERS, 1974, 25 (10) :620-621
[2]   SHORT-CAVITY SINGLE-MODE 1.3 MU-INGAASP LASERS WITH EVAPORATED HIGH-REFLECTIVITY MIRRORS [J].
BURRUS, CA ;
LEE, TP ;
DENTAI, AG .
ELECTRONICS LETTERS, 1981, 17 (25-2) :954-956
[3]   GALNASP-INP STRIPE-GEOMETRY LASER WITH A REACTIVE-ION-ETCHED FACET [J].
COLDREN, LA ;
IGA, K ;
MILLER, BI ;
RENTSCHLER, JA .
APPLIED PHYSICS LETTERS, 1980, 37 (08) :681-683
[4]   SHORT-CAVITY INGAASP INJECTION-LASERS - DEPENDENCE OF MODE SPECTRA AND SINGLE-LONGITUDINAL-MODE POWER ON CAVITY LENGTH [J].
LEE, TP ;
BURRUS, CA ;
COPELAND, JA ;
DENTAI, AG ;
MARCUSE, D .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (07) :1101-1113
[5]   GAAS INTEGRATED OPTICAL CIRCUITS BY WET CHEMICAL ETCHING [J].
MERZ, JL ;
LOGAN, RA ;
SERGENT, AM .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (02) :72-82
[6]   GAAS DOUBLE HETEROSTRUCTURE LASERS FABRICATED BY WET CHEMICAL ETCHING [J].
MERZ, JL ;
LOGAN, RA .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) :3503-3509
[7]   SURFACE-EMITTING GAINASP INP INJECTION-LASER WITH SHORT CAVITY LENGTH [J].
MOTEGI, Y ;
SODA, H ;
IGA, K .
ELECTRONICS LETTERS, 1982, 18 (11) :461-463
[8]   ALGAAS/GAAS MICROCLEAVED FACET (MCF) LASER MONOLITHICALLY INTEGRATED WITH PHOTO-DIODE [J].
WADA, O ;
YAMAKOSHI, S ;
FUJII, T ;
HIYAMIZU, S ;
SAKURAI, T .
ELECTRONICS LETTERS, 1982, 18 (05) :189-190