MODELING OF PAIR-INDUCED QUENCHING IN ERBIUM-DOPED SILICATE FIBERS

被引：195
作者：
DELEVAQUE, E
GEORGES, T
MONERIE, M
LAMOULER, P
BAYON, JF
机构：
[1] Centre National d'Etudes des Telecomunications, Lannion
[2] Photonetics S.A.
[3] Centre National d'Etudes des Telecomunications, Lannion
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 01期
关键词：
D O I：
10.1109/68.185065
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We show that in low concentration erbium-doped silicate fibers (below 1000 ppm), a residual absorption at 980 nm cannot be saturated. Usual models for upconversion of Er3+ cannot match this behavior nor explain a fluorescence lifetime independent of pump power and erbium concentration. We exhibit a phenomenon, the pair induced quenching (PIQ), that is compatible with the previous experimental results. We finally present the influence of erbium and aluminum concentration on the ion pair proportion.
引用
收藏
页码：73 / 75
页数：3
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