LOW-ENERGY ION-ASSISTED DEPOSITION OF METAL-FILMS

被引:19
作者
ROY, R
机构
[1] IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY
关键词
D O I
10.1016/0257-8972(92)90239-7
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A review is given of ion-beam-assisted (IBAD) metal film growth, focusing on ion beam techniques. Common experimental techniques including ion-beam-assisted evaporation and dual-ion-beam sputtering are described. Emphasis is placed on ion-bombardment-induced changes in film properties, including stress, resistivity, hardness, and magnetic properties. In addition, effects on film microstructure including grain size, texture, grain shape, and impurity incorporation are detailed. The themes emphasized in this review include (1) the complex relationship between changes in experimental deposition parameters and changes in film properties and microstructure, (2) current understanding of microstructure-property relations in ion-assisted films, and (3) important mechanisms for ion-assisted metal film growth.
引用
收藏
页码:203 / 211
页数:9
相关论文
共 50 条
[41]   ION-ASSISTED DEPOSITION OF LANTHANUM FLUORIDE THIN-FILMS [J].
TARGOVE, JD ;
LEHAN, JP ;
LINGG, LJ ;
MACLEOD, HA ;
LEAVITT, JA ;
MCINTYRE, LC .
APPLIED OPTICS, 1987, 26 (17) :3733-3737
[42]   Improvement of the homogeneity of optical thin films by ion-assisted deposition [J].
Lee, CC ;
Liou, YY ;
Jaing, CC .
JOURNAL OF MODERN OPTICS, 1996, 43 (06) :1149-1154
[43]   Microstructural modification in Co/Cu multilayers prepared by low energy ion-assisted deposition [J].
Telling, ND ;
Crapper, MD ;
Lovett, DR ;
Guilfoyle, SJ ;
Tang, CC ;
Petty, M .
THIN SOLID FILMS, 1998, 317 (1-2) :278-281
[44]   DIAMOND FILMS BY ION-ASSISTED DEPOSITION AT ROOM-TEMPERATURE [J].
KITABATAKE, M ;
WASA, K .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :1793-1797
[45]   ULTRA-LOW-TEMPERATURE GROWTH OF HIGH-INTEGRITY GATE OXIDE-FILMS BY LOW-ENERGY ION-ASSISTED OXIDATION [J].
KAWAI, Y ;
KONISHI, N ;
WATANABE, J ;
OHMI, T .
APPLIED PHYSICS LETTERS, 1994, 64 (17) :2223-2225
[47]   OPTIMIZATION OF DEPOSITION PARAMETERS IN ION-ASSISTED DEPOSITION OF OPTICAL THIN-FILMS [J].
MARTIN, PJ ;
NETTERFIELD, RP .
THIN SOLID FILMS, 1991, 199 (02) :351-358
[48]   CHANGE OF ELECTRICAL-RESISTIVITY OF METAL-FILMS BOMBARDED WITH HELIUM IONS OF LOW-ENERGY [J].
NOMURA, A ;
KANAYAMA, M ;
KIYONO, S .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (06) :2394-2395
[49]   Low energy ion assisted deposition of Ta/Cu films [J].
Quan, J. J. ;
Zhou, X. W. ;
He, L. ;
Hull, R. ;
Wadley, H. N. G. .
JOURNAL OF APPLIED PHYSICS, 2007, 101 (02)
[50]   Low energy ion assisted deposition of Ta/Cu films [J].
Quan, J.J. ;
Zhou, X.W. ;
He, L. ;
Hull, R. ;
Wadley, H.N.G. .
Journal of Applied Physics, 2007, 101 (02)