LOW-ENERGY ION-ASSISTED DEPOSITION OF METAL-FILMS

被引：19
作者：
ROY, R
机构：
[1] IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY
来源：
SURFACE & COATINGS TECHNOLOGY | 1992年 / 51卷 / 1-3期
关键词：
D O I：
10.1016/0257-8972(92)90239-7
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A review is given of ion-beam-assisted (IBAD) metal film growth, focusing on ion beam techniques. Common experimental techniques including ion-beam-assisted evaporation and dual-ion-beam sputtering are described. Emphasis is placed on ion-bombardment-induced changes in film properties, including stress, resistivity, hardness, and magnetic properties. In addition, effects on film microstructure including grain size, texture, grain shape, and impurity incorporation are detailed. The themes emphasized in this review include (1) the complex relationship between changes in experimental deposition parameters and changes in film properties and microstructure, (2) current understanding of microstructure-property relations in ion-assisted films, and (3) important mechanisms for ion-assisted metal film growth.
引用
收藏
页码：203 / 211
页数：9
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[21]   Ion-assisted deposition of textured thin films on low-cost substrates [J].
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[22]   Effect of ion-energy on the properties of amorphous GaN films produced by ion-assisted deposition [J].
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[23]   Metal fluoride coatings prepared by ion-assisted deposition [J].
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ADVANCES IN OPTICAL THIN FILMS III, 2008, 7101
[24]   Low-energy positive oxygen ion assisted deposition of barium titanate thin films at low temperatures [J].
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JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1998, 32 :S1642-S1644
[25]   LOW-TEMPERATURE GROWTH AND ION-ASSISTED DEPOSITION [J].
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PHYSICAL REVIEW B, 1995, 51 (08) :5061-5064
[26]   AN ULTRAHIGH-VACUUM, LOW-ENERGY ION-ASSISTED DEPOSITION SYSTEM FOR III-V-SEMICONDUCTOR FILM GROWTH [J].
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :2273-2279
[27]   LOW-ENERGY ION-ASSISTED DEPOSITION OF TITANIUM NITRIDE OHMIC CONTACTS ON ALPHA (6H)-SILICON CARBIDE [J].
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DAVIS, RF .
APPLIED PHYSICS LETTERS, 1991, 59 (22) :2868-2870
[28]   Mechanical characterisation of titanium nitride films formed by low-energy ion beam assisted deposition [J].
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Gerlach, JW ;
Wengenmair, H ;
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Hartmann, J ;
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[29]   LOW-TEMPERATURE GROWTH OF HIGHLY ORIENTED TIN FILMS BY ION-ASSISTED DEPOSITION [J].
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[30]   ZnO thin films prepared by ion-assisted deposition method [J].
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