LOW-ENERGY ION-ASSISTED DEPOSITION OF METAL-FILMS

被引:19
作者
ROY, R
机构
[1] IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY
关键词
D O I
10.1016/0257-8972(92)90239-7
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A review is given of ion-beam-assisted (IBAD) metal film growth, focusing on ion beam techniques. Common experimental techniques including ion-beam-assisted evaporation and dual-ion-beam sputtering are described. Emphasis is placed on ion-bombardment-induced changes in film properties, including stress, resistivity, hardness, and magnetic properties. In addition, effects on film microstructure including grain size, texture, grain shape, and impurity incorporation are detailed. The themes emphasized in this review include (1) the complex relationship between changes in experimental deposition parameters and changes in film properties and microstructure, (2) current understanding of microstructure-property relations in ion-assisted films, and (3) important mechanisms for ion-assisted metal film growth.
引用
收藏
页码:203 / 211
页数:9
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