DEPOSITION OF SIC FILMS BY PULSED EXCIMER LASER ABLATION

被引：55

作者：

BALOOCH, M ^{[1
]}

TENCH, RJ ^{[1
]}

SIEKHAUS, WJ ^{[1
]}

ALLEN, MJ ^{[1
]}

CONNOR, AL ^{[1
]}

OLANDER, DR ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT NUCL ENGN,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 15期

关键词：

D O I：

10.1063/1.103346

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films of β-SiC were grown on Si substrates by excimer laser pulse ablation of bulk SiC. The films were examined by Auger electron, x-ray, and photoelectron spectroscopies and laser ionization mass analysis techniques. The film was smooth as monitored by scanning electron microscopy. Scanning electron and scanning tunneling microscopy (STM) showed inclusions in the deposited SiC films, and laser ionization mass analysis detected SiC dimers in the vapor plume emitted from the target.

引用

页码：1540 / 1542

页数：3

共 12 条

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