APPLICATION OF A LOW-PRESSURE RADIO-FREQUENCY DISCHARGE SOURCE TO POLYSILICON GATE ETCHING

被引：49

作者：

COOK, JM ^{[1
]}

IBBOTSON, DE ^{[1
]}

FLAMM, DL ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 01期

关键词：

D O I：

10.1116/1.584859

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1 / 4

页数：4

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