GA0.51IN0.49P/GAAS HEMTS EXHIBITING GOOD ELECTRICAL PERFORMANCE AT CRYOGENIC TEMPERATURES

被引：83

作者：

CHAN, YJ ^{[1
]}

PAVLIDIS, D ^{[1
]}

RAZEGHI, M ^{[1
]}

OMNES, F ^{[1
]}

机构：

[1] THOMSON CSF,LCR,F-91401 ORSAY,FRANCE

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 10期

关键词：

D O I：

10.1109/16.59902

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The dc and microwave characteristics of Ga0.5l–In0.49P/GaAs HEMT’s grown by MOCVD are presented. Devices with 1 nm long gates show transconductance of 163 and 213 mS/mm at 300 and 77 K, respectively. Their maximum cutoff frequency is 17.8 GHz. Deep traps in the doped layer were evaluated at low temperature by the threshold voltage shift and current collapse phenomena. Galn-P/GaAs HEMT’s show no current collapse and have almost zero threshold voltage shift compared to AlGaAs/GaAs and InAlAs/InGaAs where the corresponding values are 0.5 and 0.25 V, respectively. © 1990 IEEE

引用

页码：2141 / 2147

页数：7

共 19 条

[1] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAIP VISIBLE LASER-DIODES OPERATING AT 0.66-0.68 MU-M AT ROOM TEMPERATURES [J].