SILICIDE FORMATION AT THE TI/SI(111) INTERFACE - DIFFUSION PARAMETERS AND BEHAVIOR AT ELEVATED-TEMPERATURES

被引：102
作者：
CHAMBERS, SA
HILL, DM
XU, F
WEAVER, JH
机构：
来源：
PHYSICAL REVIEW B | 1987年 / 35卷 / 02期
关键词：
D O I：
10.1103/PhysRevB.35.634
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：634 / 640
页数：7
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