COLLIMATED MAGNETRON SPUTTER-DEPOSITION WITH GRAZING ANGLE ION-BOMBARDMENT

被引：15

作者：

ROSSNAGEL, SM ^{[1
]}

SWARD, R ^{[1
]}

机构：

[1] IBM CORP,DIV MICROELECTR,FISHKILL,NY 12524

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1995年 / 13卷 / 01期

关键词：

D O I：

10.1116/1.579433

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：156 / 158

页数：3

共 6 条

[1]

JOSHI RV, 1992, 9TH P INT VLSI MULT, P253

[2]

LIU D, 1993, J APPL PHYS, V73, P5432

[3]

MIKALSEN D, 1989, Patent No. 4824544

[4]

ROEHL S, 1992, 9TH P INT VLSI MULT, P22

[5] COLLIMATED MAGNETRON SPUTTER DEPOSITION [J].

ROSSNAGEL, SM ;

MIKALSEN, D ;

KINOSHITA, H ;

CUOMO, JJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (02) :261-265

[6]

Taylor D. S., 1993, Advanced Metallization for ULSI Applications 1992. Proceedings of the Conference, P353