VELOCITY-FIELD CHARACTERISTICS OF SELECTIVELY DOPED GAAS/ALXGA1-XAS QUANTUM-WELL HETEROSTRUCTURES

被引：12

作者：

TAN, LS ^{[1
]}

CHUA, SJ ^{[1
]}

ARORA, VK ^{[1
]}

机构：

[1] UNIV WILKES,DEPT ELECT & COMP ENGN,WILKES BARRE,PA 18766

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.47.13868

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recent experimental observations indicating poor correlation between the saturation velocity and Ohmic mobility lead us to propose a theory for a velocity-limiting mechanism in quantum-well heterostructures. The theory is based on the distribution function which takes into account the electron-drift anisotropy introduced by the high electric field for a degenerately doped quantum well. The drift velocity is shown to be limited by the Fermi velocity; a result which indicates that the saturation velocity is independent of the low-field mobility which is strongly controlled by momentum-randomizing scattering events. The dominance of optical-phonon emission at high electric field lowers the saturation velocity below the Fermi velocity. Excellent agreement is obtained between the theoretical and experimental results on the velocity-field characteristics of GaAs/AlxGa1-xAs quantum-well heterostructures.

引用

页码：13868 / 13871

页数：4

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