20-GB/S DIGITAL SSIS USING ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FOR FUTURE OPTICAL-TRANSMISSION SYSTEMS

被引：10
|
作者：
ICHINO, H
机构：
[1] NTT LSI Laborataries, Atsugi-shi, Kanasgawa, 243-01, 3-1, Morinosato Wakamiya
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1993年 / 28卷 / 02期
关键词：
D O I：
10.1109/4.192042
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Design principles to achieve good eye opening and circuit optimization to extract high performance from AlGaAs/GaAs HBT devices are described. Using the circuit techniques and HBT's with an f(T) of 70 GHz and an f(max) of 50 GHz, four kinds of SSI's are developed for future optical transmission systems. High-bit-rate operation of over 20 Gb/s (26-GHz toggle flip-flop, 20-Gb/s decision circuit, 20-Gb/s EXCLUSIVE OR/NOR gate, and 28-Gb/s selector IC), extremely fast rise and fall times (20-80%) of 20 and 14 ps, respectively, and good eye opening am obtained. In addition, potential performance gains that might be realized through advanced circuit and device design are appraised, and throughputs as fast as 40 Gb/s are predicted.
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页码：115 / 122
页数：8
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