LIFETIME OF DOMINANT RADICALS FOR THE DEPOSITION OF A-SI-H FROM SIH4 AND SI2H6 GLOW-DISCHARGES

被引:40
作者
MATSUDA, A
KAGA, T
TANAKA, H
TANAKA, K
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D O I
10.1016/0022-3093(83)90264-8
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
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页码:687 / 690
页数:4
相关论文
共 5 条
[1]   GLOW-DISCHARGE DEPOSITION OF A-SI-H FROM PURE SI2H6 AND PURE SIH4 [J].
MATSUDA, A ;
KAGA, T ;
TANAKA, H ;
MALHOTRA, L ;
TANAKA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (02) :L115-L117
[2]   PLASMA SPECTROSCOPY GLOW-DISCHARGE DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON [J].
MATSUDA, A ;
TANAKA, K .
THIN SOLID FILMS, 1982, 92 (1-2) :171-187
[3]   PREPARATIONS OF A-SI-H FROM HIGHER SILANES (SINH2N+2) WITH THE HIGH GROWTH-RATE [J].
OGAWA, K ;
SHIMIZU, I ;
INOUE, E .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (09) :L639-L642
[4]  
SCOTT BA, 1980, APPL PHYS LETT, V37, P727
[5]   LIFETIMES AND TOTAL TRANSITION PROBABILITIES FOR NH, SIH, AND SID [J].
SMITH, WH .
JOURNAL OF CHEMICAL PHYSICS, 1969, 51 (02) :520-&