A 2.1-6 GHz SiGe BiCMOS low-noise amplifier design for a multi-mode wideband receiver

被引：0

作者：

Chen Lei ^{[1
]}

Ruan Ying ^{[1
]}

Ma Heliang ^{[1
]}

Lai Zongsheng ^{[1
]}

机构：

[1] East China Normal Univ, Inst Microelect Circuit & Syst, Shanghai 200062, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2010年 / 31卷 / 05期

关键词：

SiGe; BiCMOS; low-noise-amplifier; wideband; electrostatic discharge;

D O I：

10.1088/1674-4926/31/5/055001

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A wideband low-noise amplifier (LNA) with ESD protection for a multi-mode receiver is presented. The LNA is fabricated in a 0.18-mu m SiGe BiCMOS process, covering the 2.1 to 6 GHz frequency band. After optimized noise modeling and circuit design, the measured results show that the LNA has a 12 dB gain over the entire bandwidth, the input third intercept point (IIP3) is -8 dBm at 6 GHz, and the noise figure is from 2.3 to 3.8 dB in the operating band. The overall power consumption is 8 mW at 2.5 V voltage supply.

引用

页码：0550011 / 0550014

页数：4

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