THE EFFECTS OF MIXING N-2 IN CCL4 ON ALUMINUM REACTIVE ION ETCHING

被引：22

作者：

SATO, M

NAKAMURA, H

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 11期

关键词：

D O I：

10.1149/1.2123597

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2522 / 2527

页数：6

共 14 条

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[9] REACTIVE ION ETCHING OF ALUMINUM USING SICL4 [J].

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[10] REACTIVE ION ETCHING OF ALUMINUM AND ALUMINUM-ALLOYS IN AN RF PLASMA CONTAINING HALOGEN SPECIES [J].

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