THRESHOLD CURRENTS FOR LINE NARROWING IN GAAS JUNCTION DIODES

被引：10

作者：

MAYBURG, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1963年 / 34卷 / 06期

关键词：

D O I：

10.1063/1.1702681

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1791 / &

共 10 条

[1] LASER CONDITIONS IN SEMICONDUCTORS [J].

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DURAFFOURG, G .

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[2] ROOM-TEMPERATURE STIMULATED EMISSION [J].

BURNS, G ;

NATHAN, MI .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1963, 7 (01) :72-73

[3]

CUNNELL FA, 1960, SERL TECH J, V10, P83

[4] COHERENT LIGHT EMISSION FROM GAAS JUNCTIONS [J].

HALL, RN ;

CARLSON, RO ;

SOLTYS, TJ ;

FENNER, GE ;

KINGSLEY, JD .

PHYSICAL REVIEW LETTERS, 1962, 9 (09) :366-&

[5] DIRECT RECOMBINATION IN GAAS AND SOME CONSEQUENCES IN TRANSISTOR DESIGN [J].

MAYBURG, S .

SOLID-STATE ELECTRONICS, 1961, 2 (04) :195-201

[6]

MAYBURG S, TO BE PUBLISHED

[7] STIMULATED EMISSION OF RADIATION FROM GAAS P-N JUNCTIONS [J].

NATHAN, MI ;

DUMKE, WP ;

BURNS, G ;

DILL, FH ;

LASHER, G .

APPLIED PHYSICS LETTERS, 1962, 1 (03) :62-64

[8] SEMICONDUCTOR MASER OF GAAS [J].

QUIST, TM ;

REDIKER, RH ;

KEYES, RJ ;

KRAG, WE ;

LAX, B ;

MCWHORTER, AL ;

ZEIGLER, HJ .

APPLIED PHYSICS LETTERS, 1962, 1 (04) :91-92

[9]

SPENKE E, 1958, ELECTRONIC SEMICONDU, P387

[10]

SPENKE E, 1958, ELECTRONIC SEMICONDU, P242

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