CARRIER-GAS EFFECTS ON CHARACTERISTICS OF COPPER CHEMICAL-VAPOR-DEPOSITION USING HEXAFLUORO-ACETYLACETONATE-COPPER(1) TRIMETHYLVINYLSILANE

被引：46
作者：
AWAYA, N
ARITA, Y
机构：
[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa, 243-01
来源：
THIN SOLID FILMS | 1995年 / 262卷 / 1-2期
关键词：
CHEMICAL VAPOR DEPOSITION; COPPER; METALLIZATION; SEMICONDUCTORS;
D O I：
10.1016/0040-6090(95)05815-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The deposition characteristics of copper chemical vapor deposition using the liquid precursor hexafluoro-acetylacetonate-copper(1) trimethylvinylsilane are investigated. The precursor supply is directly controlled by a liquid-injection system. The deposition rate and selectivity on the substrate surface strongly depend on the carrier gas. A hydrogen carrier-gas system has a higher deposition rate and lower selectivity than an argon carrier gas. The deposition rate of copper is proportional to the square root of the precursor partial pressure under reaction-rate-limited conditions at a substrate temperature below 200 degrees C. In these conditions, a deposition rate of up to 70 nm min(-1) and an apparent activation energy of 11 kcal mol(-1) has been obtained. Surface morphology and step coverage improves with decreasing substrate temperature and increasing precursor supply. A smooth film with a low resistivity of 2.0 Omega cm can be formed superconformally on the step coverage at a substrate temperature below 18 degrees C and a high aspect ratio vias can be filled under the optimum deposition conditions.
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页码：12 / 19
页数：8
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