LF DEPENDENCE OF THE OUTPUT ADMITTANCE IN SHORT-CHANNEL N-POWER OR P-POWER MOS-TRANSISTORS

被引：0

作者：

ZUNIGA, MG ^{[1
]}

TRANDUC, H ^{[1
]}

PHAM, TP ^{[1
]}

ROSSEL, P ^{[1
]}

机构：

[1] CNRS,AUTOMAT & ANAL SYST LAB,F-31400 TOULOUSE,FRANCE

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 05期

关键词：

D O I：

10.1109/T-ED.1982.20787

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：838 / 841

页数：4

共 16 条

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