GROWTH OF BI4(GE,SI)3O12 AND BI12(GE,SI)O20 CRYSTALS BY FLOATING-ZONE TECHNIQUE

被引：3

作者：

GOPALAKRISHNAN, R ^{[1
]}

RAMASAMY, P ^{[1
]}

机构：

[1] ANNA UNIV,CTR CRYSTAL GROWTH,MADRAS 600025,INDIA

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1994年 / 29卷 / 08期

关键词：

D O I：

10.1002/crat.2170290821

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

[No abstract available]

引用

页码：K107 / K111

页数：5

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